Sometimes it is also known as a metal-insulator field-effect transistor (MIFET).Ī N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). You can download the datasheet of BS170 from the link given below:Ĭhannel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). V DD = 25V, I D = 500mA, V GS = 10V, R GEN = 50Wġ.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Maximum Power Dissipation Derate above 25☌ Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds ■ Voltage controlled small signal switch. ■ High density cell design for low RDS(ON). They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
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